publication date : oct 2011 1 < silicon rf power mos fet ( discrete ) > rd0 6hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w description rd06hhf1 is a mos fet type transistor specifically designed for hf rf power amplifiers applications. features high power g ain: po ut> 6 w, gp>1 6 db @vdd=12.5v,f= 30 mhz application for output stage of high power amplifiers in hf band mobile radio sets. rohs compliant rd06hhf1 - 101 is a rohs compliant products. rohs compliance is indicate by the letter ? g ? after the lot marking. this p roduct include the lead in high melting temperaturetype solders. however,it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders(i.e.tin - lead solder alloys containing more than85% lead.) outline drawing note: torelance of no designation means typical value. dimension in mm. 0.5+0.10/-0.15 pins 1:gate 2:source 3:drain 1.3+/-0.4 1 2 . 3 m i n 2 . 5 9.5max 5deg 2 . 5 4 . 5 + / - 0 . 5 3 . 1 + / - 0 . 6 3.6+/-0.2 0.8+0.10/-0.15 1.2+/-0.4 2 9.1+/-0.7 1 2 . 3 + / - 0 . 6 9 + / - 0 . 4 4 . 8 m a x 1 3 . 2 + / - 0 . 4 3 2
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 2 absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit v dss drain to source voltage vgs=0v 50 v v gss gate to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 27.8 w p in input power zg=zl=50 ? 0.3 w id d rain current - 3 a t ch channel t emperature - 150 c tstg storage temperature - - 40 to +1 50 c rth j - c thermal resistance junction to case 4.5 c/w note 1: above parameters are guaranteed independently. electrical characteristics (tc=25 c , unless ot herwise noted) limits unit symbol parameter conditions min typ max. i dss drain cutoff current v ds =17v, v gs =0v - - 10 u a i gss gate cutoff current v gs =10v, v ds =0v - - 1 u a v th gate threshold voltage v ds =1 2 v, i ds =1ma 1.9 - 4.9 v pout output power 6 10 - w ? d drain efficiency v d d =12.5v, pin= 0.15 w, f= 3 0mhz , idq=0.5a 55 65 - % load vswr tolerance v dd =15.2v,po=6w(pin control) f=30mhz,idq=0.5a,zg=50 ? load vswr=20:1(all phase) no destroy - note : above parameters , ratings , limits and conditions are s ubject to change.
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 3 typical characteristics channnel dissipation vs. ambient temperature 0 10 20 30 40 50 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) vgs-ids characteristics 0 1 2 3 4 5 0 2 4 6 8 10 vgs(v) i d s ( a ) ta=+25c vds=10v vds vs. crss characteristics 0 2 4 6 8 10 0 10 20 30 vds(v) c r s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 20 40 60 80 100 0 10 20 30 vds(v) c o s s ( p f ) ta=+25c f=1mhz vds vs. ciss characteristics 0 10 20 30 40 50 60 0 10 20 30 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds-ids characteristics 0 1 2 3 4 0 2 4 6 8 10 vds(v) i d s ( a ) ta=+25c vgs=9v vgs=8v vgs=7v vgs=6v vgs=5v vgs=10v
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 4 typical characteristics pin-po characteristics 0 10 20 30 40 50 -10 0 10 20 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=30mhz vdd=12.5v idq=0.5a po gp pin-po characteristics 0 2 4 6 8 10 12 14 0.0 0.1 0.2 0.3 pin(w) p o u t ( w ) , i d d ( a ) 30 40 50 60 70 80 90 100 d ( % ) po d idd ta=25c f=30mhz vdd=12.5v idq=0.5a vdd-po characteristics 0 2 4 6 8 10 12 14 16 4 6 8 10 12 14 vdd(v) p o ( w ) 0 1 2 3 4 i d d ( a ) idd ta=25c f=30mhz pin=0.15w idq=0.5a zg=zi=50 ohm po vgs-ids charactoristics 2 0 1 2 3 4 5 0 2 4 6 8 10 vgs(v) i d s ( a ) , g m ( s ) vds=10v tc=-25~+75c -25c +75c +25c vgs- g m charactoristics 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 6 7 8 9 vgs(v) g m ( s ) vds=10v tc=-25~+75c -25c +75c +25c
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 5 test circuit(f=30mhz) l4:6turns,i.d5.6mm,d0.9mm copper wire c2:470pf*2 in parallel 67 75 c2 c2 l5 100pf 1ohm l3 220pf 56pf 1kohm l3:5turns,i.d5.6mm,d0.9mm copper wire l2:10turns,i.d6mm,d1.6mm silver plated copper wire l2 l1 8.2kohm 65 46 18 1.5 dimensions:mm rf-in vdd vgg l1:10turns,i.d8mm,d0.9mm copper wire 330uf,50v c1 rf-out c1:100pf, 0.022uf, 0.1uf in parallel note:board material ptfe substrate micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm 36 42 45 5 16 35 220pf 100pf c1 c1 10uf,50v*3pcs c1 75 91 150/120pf 200/200pf 56pf l6 77.5 100 l5:4turns,i.d5.6mm,d0.9mm copper wire p=0.5mm 84pf 30pf 100pf l4 91 100 l6:7turns,i.d5.6mm,d0.9mm copper wire 88
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 6 input/output impedance vs.frequency characteristics zin , zout f zin zout (mhz) (ohm) (ohm) conditions 30 65.06 - j 150.9 8.75 - j 4.92 po= 10 w, vdd=12.5v,pin= 0.15 w f=30mhz zout f=30mhz zin zo=50
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 7 rd06hhf1 s-parameter data (@vdd=12.5v, id=500ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 10 0.985 -18.8 34.407 165.9 0.008 76.2 0.826 -17.3 30 0.900 -50.4 30.427 143.3 0.021 59.4 0.767 -43.6 50 0.799 -74.4 24.979 126.1 0.029 43.2 0.677 -65.0 100 0.667 -109.6 15.565 100.7 0.032 27.3 0.547 -96.8 150 0.636 -129.0 10.953 85.1 0.032 23.1 0.523 -113.4 200 0.630 -140.1 8.194 73.7 0.029 25.3 0.528 -124.7 250 0.645 -148.2 6.528 63.9 0.027 34.5 0.561 -132.7 300 0.663 -155.0 5.315 55.2 0.027 49.1 0.588 -139.6 350 0.685 -160.7 4.437 47.4 0.031 61.8 0.622 -145.9 400 0.708 -165.9 3.771 39.9 0.039 71.0 0.657 -151.7 450 0.729 -170.8 3.233 33.2 0.048 75.8 0.686 -157.0 500 0.752 -175.4 2.826 26.8 0.059 77.9 0.715 -162.3 550 0.771 179.9 2.475 20.7 0.070 76.9 0.743 -167.6 600 0.789 175.4 2.186 15.2 0.083 76.1 0.763 -172.3 650 0.804 171.2 1.943 9.7 0.095 73.7 0.789 -177.3 700 0.819 166.9 1.738 4.6 0.108 71.0 0.804 178.1 750 0.834 162.6 1.560 0.0 0.120 68.1 0.820 173.5 800 0.842 158.5 1.410 -4.5 0.133 65.0 0.837 169.0 850 0.851 154.3 1.275 -8.7 0.145 61.6 0.847 164.8 900 0.859 150.3 1.160 -12.6 0.157 58.2 0.858 160.2 950 0.866 146.2 1.058 -16.9 0.167 54.5 0.869 155.7 1000 0.870 142.3 0.963 -20.0 0.179 51.0 0.876 151.8 s11 s21 s12 s22
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 8 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( di screte ) > rd06hhf1 rohs compliance, silicon mosfet power transistor 30mhz,6w publication date : oct 2011 9 ? 2011 mitsubishi electric corporation. all rights r eserved. keep safety first in your circuit designs! mitsubishi electric corporat ion puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to giv e due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the us e of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents informa tion on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi e lectric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubish i semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a tota l system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi ele ctric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semicon ductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of m itsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese gov ernment and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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